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F00029 データシート(PDF) 2 Page - Solid States Devices, Inc |
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F00029 データシート(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00029C DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF140J SFF140JBW Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) BVDSS 100 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID ) RDS(on)1 –– 0.067 0.077 Ω On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID) RAS(on)2 –– 0.125 A Gate Threshold Voltage (VDS=VGS, ID= 250 µA) VGS(th) 2.0 2.4 4.0 V Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID ) gfs 8.7 13 –– S(mho) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=150ºC) IDSS –– –– –– –– 25 250 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– –– –– –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 60% rated VDS 60% Rated ID Qg Qgs Qgd –– –– –– 40 8 19 75 12 35 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS 60% Rated ID RG= 6.2 Ω VGS=10 Volts td(on) tr td(off) tf –– –– –– –– 15 72 40 50 23 110 60 75 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– 1.3 2.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/ µsec trr QRR –– 0.44 150 0.91 400 1.9 nsec nC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss –– –– –– 1750 575 125 –– –– –– pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. |
同様の部品番号 - F00029 |
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同様の説明 - F00029 |
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