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F00225 データシート(PDF) 2 Page - Solid States Devices, Inc

部品番号 F00225
部品情報  QUAD N-CHANNEL POWER MOSFET
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メーカー  SSDI [Solid States Devices, Inc]
ホームページ  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

F00225 データシート(HTML) 2 Page - Solid States Devices, Inc

  F00225 Datasheet HTML 1Page - Solid States Devices, Inc F00225 Datasheet HTML 2Page - Solid States Devices, Inc  
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SOLID STATE DEVICES, INC.
SFF120-28Q
PRELIMINARY
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25
oC (Unless Otherwise Specified)
V
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250
:A)
-
BVDSS
-
RATING
SYMBOL
MIN
TYP
MAX
UNIT
100
S
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
-
RDS(on)
0.35
-
V
Gate Threshold Voltage
(VDS =VGS, ID =250
:A)
-
VGS(th)
4.0
2.0
S(
É)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS =60% rated ID)
4.1
gfs
-
2.7
:A
Zero Gate Voltage Drain Current
(VDS = max rated Voltage, VGS = 0V)
(VDS = 80% rated VDS, VGS = 0V, TA = 125
oC)
-
-
IDSS
-
-
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
-
IGSS
+100
-100
-
-
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10 V
80% rated VDS
60% rated ID
Qg
Qgs
Qgd
-
-
-
10.7
2.9
5.1
16
4.4
7.7
nsec
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
VDD =50%
rated VDS
50% rated ID
RG = 18
S
td (on)
tr
td (off)
tf
-
-
-
-
13
30
19
20
20
45
29
30
V
-
VSD
2.5
-
Diode Reverse Recovery Time
Reverse Recovery Charge
140
0.65
trr
QRR
260
1.3
55
0.25
TJ =25oC
IF = rated ID
di/dt = 100A/
:sec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
Coss
Crss
-
-
-
350
130
36
-
-
-
pF
nsec
:C
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
A
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
-
ID(on)
-
9.2
Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25
oC)
nC
nA
25
250
NOTES:


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