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LM20144 データシート(PDF) 4 Page - Texas Instruments |
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LM20144 データシート(HTML) 4 Page - Texas Instruments |
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4 / 29 page  LM20144 SNVS529F – OCTOBER 2007 – REVISED NOVEMBER 2011 www.ti.com ELECTRICAL CHARACTERISTICS Unless otherwise stated, the following conditions apply: AVIN = PVIN = VIN = 5V. Limits in standard type are for TJ = 25°C only, limits in bold face type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are specified by test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Symbol Parameter Conditions Min Typ Max Units VFB Feedback pin voltage VIN = 2.95V to 5.5V 0.788 0.8 0.812 V ΔVOUT/ΔIOUT Load Regulation IOUT = 100 mA to 4A 0.08 %/A ICL Switch Current Limit Threshold VIN = 3.3V 5.4 6.0 6.6 A RDS_ON High-Side Switch On Resistance ISW = 3.5A 36 55 m Ω RDS_ON Low-Side Switch On Resistance ISW = 3.5A 32 52 m Ω IQ Operating Quiescent Current Non-switching, VFB = VCOMP 3.5 6 mA ISD Shutdown Quiescent current VEN = 0V 90 180 µA VUVLO VIN Under Voltage Lockout Rising VIN 2.45 2.7 2.95 V VUVLO_HYS VIN Under Voltage Lockout Hysteresis Falling VIN 45 100 mV VVcc VCC Voltage IVCC = 0 µA 2.45 2.7 2.95 V ISS Soft-Start Pin Source Current VSS/TRK = 0V 2 4.5 7 µA VTRACK SS/TRK Accuracy, VSS - VFB VSS/TRK = 0.4V -10 3 15 mV Oscillator FOSCH Oscillator Frequency RT = 49.9 kΩ 1350 1500 1650 kHz FOSCL Oscillator Frequency RT = 249 kΩ 440 500 560 kHz DCMAX Maximum Duty Cycle ILOAD = 0A 85 % TON_TIME Minimum On Time 100 ns TCL_BLANK Current Sense Blanking Time After Rising VSW 80 ns Error Amplifier and Modulator IFB Feedback pin bias current VFB = 0.8V 1 100 nA ICOMP_SRC COMP Output Source Current VFB = VCOMP = 0.6V 80 100 µA ICOMP_SNK COMP Output Sink Current VFB = 1.0V, VCOMP = 0.6V 80 100 µA gm Error Amplifier Transconductance ICOMP = ± 50 µA 450 510 600 µmho AVOL Error Amplifier Voltage Gain 2000 V/V Power Good VOVP Over Voltage Protection Rising Threshold 105 108 111 % With respect to VFB VOVP_HYS Over Voltage Protection Hysteresis 2 3 % VPGTH PGOOD Rising Threshold 92 94 96 % With respect to VFB VPGHYS PGOOD Falling Hysteresis 2 3 % TPGOOD PGOOD deglitch time 16 µs IOL PGOOD Low Sink Current VPGOOD = 0.4V 0.6 1 mA IOH PGOOD High Leakage Current VPGOOD = 5V 5 100 nA Enable VIH_EN EN Pin turn-on Threshold VEN Rising 1.08 1.18 1.28 V VEN_HYS EN Pin Hysteresis 66 mV Thermal Shutdown TSD Thermal Shutdown 160 °C TSD_HYS Thermal Shutdown Hysteresis 10 °C Thermal Resistance θJA Junction to Ambient (1) 38 °C/W θJC Junction to Case (2) 3.5 (1) On JEDEC 4–Layer test board (JESD51-7) with eight (8) thermal vias. (2) θJC refers to center of the Exposed Pad on the bottom of the package as the Case. 4 Submit Documentation Feedback Copyright © 2007–2011, Texas Instruments Incorporated Product Folder Links: LM20144 |
同様の部品番号 - LM20144_14 |
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同様の説明 - LM20144_14 |
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