データシートサーチシステム |
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FQD1N80TF データシート(PDF) 3 Page - Fairchild Semiconductor |
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FQD1N80TF データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 2 468 10 10 -1 10 0 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 50V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 012 34 56 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V ※ Note : I D = 1.0 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 50 100 150 200 250 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 20 30 40 50 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 10 -1 10 0 10 1 10 -2 10 -1 10 0 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics ©2009 Fairchild Semiconductor Corporation FQD1N80 / FQU1N80 Rev. C0 www.fairchildsemi.com |
同様の部品番号 - FQD1N80TF |
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同様の説明 - FQD1N80TF |
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