データシートサーチシステム |
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G1120 データシート(PDF) 3 Page - Hamamatsu Corporation |
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G1120 データシート(HTML) 3 Page - Hamamatsu Corporation |
3 / 4 page GaAsP photodiode Diffusion type Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. CONNECTED TO CASE PHOTOSENSITIVE SURFACE 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 WINDOW 3.0 ± 0.2 0.45 LEAD Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. PHOTOSENSITIVE SURFACE CONNECTED TO CASE 0.45 LEAD 8.1 ± 0.1 WINDOW 5.9 ± 0.1 9.1 ± 0.2 5.08 ± 0.2 PHOTOSENSITIVE SURFACE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. 0.45 LEAD 12.35 ± 0.1 13.9 ± 0.2 7.5 ± 0.2 WINDOW 10.5 ± 0.1 MARK ( 1.4) CONNECTED TO CASE 3.0 ± 0.2 0.45 LEAD ACTIVE AREA 6.0 ± 0.2 CATHODE TERMINAL MARK PHOTOSENSITIVE SURFACE ➀ G1115 s s s s s Dimensional outlines (unit: mm) KGPDA0012EA ➁ G1116 KGPDA0013EA ➂ G1117 KGPDA0014EA ➃ G1118 KGPDA0002EA |
同様の部品番号 - G1120 |
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同様の説明 - G1120 |
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