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2SD1126 データシート(PDF) 2 Page - Hitachi Semiconductor |
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2SD1126 データシート(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SD1126(K) 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7V Collector current I C 10 A Collector peak current I C(peak) 15 A Collector power dissipation P C* 1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current I D 10 A Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 120 — — V I C = 25 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 7— — V I E = 200 mA, IC = 0 Collector cutoff current I CBO — — 100 µAV CB = 120 V, IE = 0 I CEO —— 10 µAV CE = 100 V, RBE = ∞ DC current transfer ratio h FE 1000 — 2000 V CE = 3 V, IC = 5 A* 1 Collector to emitter saturation V CE(sat)1 — — 1.5 V I C = 5 A, IB = 10 mA* 1 voltage V CE(sat)2 — — 3.0 V I C = 10 A, IB = 0.1 A* 1 Base to emitter saturation V BE(sat)1 — — 2.0 V I C = 5 A, IB = 10 mA* 1 voltage V BE(sat)2 — — 3.5 V I C = 10 A, IB = 0.1 A* 1 C to E diode forward voltage V D — — 3.0 V I D = 10 A* 1 Turn on time t on — 0.8 — µsI C = 5 A, IB1 = –IB2 = 10 mA Turn off time t off — 8.0 — µs Note: 1. Pulse test. |
同様の部品番号 - 2SD1126 |
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同様の説明 - 2SD1126 |
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