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2SK1155 データシート(PDF) 3 Page - Hitachi Semiconductor |
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2SK1155 データシート(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK1155, 2SK1156 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK1155 V (BR)DSS 450 — — V I D = 10 mA, VGS = 0 breakdown voltage 2SK1156 500 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage 2SK1155 I DSS — — 250 µAV DS = 360 V, VGS = 0 drain current 2SK1156 V DS = 400 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source 2SK1155 R DS(on) — 1.0 1.4 Ω I D = 2.5 A, VGS = 10 V * 1 on stateresistance 2SK1156 — 1.2 1.5 Forward transfer admittance |yfs| 2.5 4.0 — S I D = 2.5 A, VDS = 10 V * 1 Input capacitance Ciss — 640 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 160 — pF f = 1 MHz Reverse transfer capacitance Crss — 20 — pF Turn-on delay time t d(on) — 10 — ns I D = 2.5 A, VGS = 10 V, Rise time t r — 25 — ns R L = 12 Ω Turn-off delay time t d(off) —50 — ns Fall time t f —30 — ns Body to drain diode forward voltage V DF — 0.95 — V I F = 5 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = 5 A, VGS = 0, di F/dt = 100 A/µs Note: 1. Pulse test |
同様の部品番号 - 2SK1155 |
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同様の説明 - 2SK1155 |
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