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2SK1304 データシート(PDF) 3 Page - Hitachi Semiconductor |
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2SK1304 データシート(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK1304 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 100 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 80 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.025 0.03 Ω I D = 20 A, VGS = 10 V * 1 — 0.03 0.04 Ω I D = 20 A, VGS = 4 V * 1 Forward transfer admittance |yfs| 22 35 — S I D = 20 A, VDS = 10 V * 1 Input capacitance Ciss — 3500 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 1400 — pF f = 1 MHz Reverse transfer capacitance Crss — 340 — pF Turn-on delay time t d(on) — 25 — ns I D = 20 A, VGS = 10 V, Rise time t r — 170 — ns R L = 1.5 Ω Turn-off delay time t d(off) — 730 — ns Fall time t f — 300 — ns Body to drain diode forward voltage V DF — 1.2 — V I F = 40 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = 40 A, VGS = 0, di F/dt = 50 A/µs Note: 1. Pulse test |
同様の部品番号 - 2SK1304 |
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同様の説明 - 2SK1304 |
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