2SK1526 datasheet(6/9 Pages) HITACHI

部品番号	2SK1526

部品情報	Silicon N-Channel MOS FET

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メーカー	HITACHI [Hitachi Semiconductor]

ホームページ	http://www.renesas.com/eng

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6 / 9 page

2SK1526, 2SK1527

6

2,000

10

Reverse Drain Current IDR (A)

1,000

100

1

200

500

Body to Drain Diode Reverse

Recovery Time

di/dt = 100 A/

µs, V

GS = 0

Pulse Test

50

220

50

5

5,000

100

10,000

20

50

Drain to Source Voltage VDS (V)

100

10

30

40

Typical Capacitance vs.

Drain to Source Voltage

0

10

Crss

Coss

Ciss

VGS = 0

f = 1 MHz

1,000

160

400

Gate Charge Qg (nc)

800

80

240

0

320

600

400

200

ID = 30 A

VDD = 400 V

VDS

Dynamic Input Characteristics

250 V

100 V

VGS

20

16

12

8

4

0

VDD = 100 V

250 V

400 V

1,000

250

Drain Current ID (A)

500

50

15

20

10

100

200

0.5

20

10

Switching Characteristics

tf

td (off)

tr

VGS = 10 V, PW = 2 µs

duty < 1%, VDD 30 V

=

.

td (on)

同様の部品番号 - 2SK1526

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SK1526	83Kb / 7P	Silicon N Channel MOS FET
Inchange Semiconductor ...	2SK1526	67Kb / 2P	Drain Current ?밒D=40A@ TC=25C
Renesas Technology Corp	2SK1526-E	83Kb / 7P	Silicon N Channel MOS FET

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