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MC-4R96CPE6C-745 データシート(PDF) 10 Page - NEC |
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MC-4R96CPE6C-745 データシート(HTML) 10 Page - NEC |
10 / 6 page Preliminary Data Sheet M14806EJ2V0DS00 10 MC-4R96CPE6C RIMM Module Current Profile IDD RIMM module power conditions Note1 MAX. Unit IDD1 One RDRAM in Read Note2, balance in NAP mode -845 711 mA -745 646 -653 561 IDD2 One RDRAM in Read Note2, balance in Standby mode -845 1,240 mA -745 1,150 -653 1,015 IDD3 One RDRAM in Read Note2, balance in Active mode -845 1,590 mA -745 1,450 -653 1,265 IDD4 One RDRAM in Write, balance in NAP mode -845 671 mA -745 616 -653 536 IDD5 One RDRAM in Write, balance in Standby mode -845 1,200 mA -745 1,120 -653 990 IDD6 One RDRAM in Write, balance in Active mode -845 1,550 mA -745 1,420 -653 1,240 Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage patterns. Power does not include Refresh Current. 2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V. |
同様の部品番号 - MC-4R96CPE6C-745 |
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同様の説明 - MC-4R96CPE6C-745 |
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