November 2013

©2003 Fairchild Semiconductor Corporation

FQD10N20C / FQU10N20C Rev. C2

www.fairchildsemi.com

1

Thermal Characteristics

Symbol

Parameter

FQD10N20CTM / FQU10N20CTU

Unit

Drain-Source Voltage

200

V

Drain Current

7.8

A

5.0

A

Drain Current

- Pulsed

(Note 1)

31.2

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

210

mJ

Avalanche Current

(Note 1)

7.8

A

Repetitive Avalanche Energy

(Note 1)

5.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

50

W

- Derate above 25°C

0.4

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQD10N20CTM / FQU10N20CTU

Unit

Thermal Resistance, Junction-to-Case, Max.

2.5

°C/W

Thermal Resistance, Junction-to-Ambient, Max.

110

FQD10N20C / FQU10N20C

200 V, 7.8 A, 360 mΩ

Features

• Low Gate Charge (Typ. 20 nC)

• Low Crss (Typ. 40.5 pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

active power factor correction (PFC), and electronic lamp

ballasts.

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D