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NEZ4450-4D データシート(PDF) 3 Page - NEC |
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NEZ4450-4D データシート(HTML) 3 Page - NEC |
3 / 18 page 3 4W/8W C-BAND Power-GaAs FET NEZ Series 4W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 Ω Ω Ω Ω Ω) P1dB GL IDS GL IM3 ηadd TEST CONDITIONS PART NUMBER (dBm) (dB) (A) (dB) (dBc) (%) VDS IDS FREQUENCY IM3 TEST *1 *2 *3, 4 *4 (RF OFF) BAND FREQ. MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V) (A) (GHz) (GHz) *5 NEZ3642-4D 35.5 36.5 10.0 11.0 1.2 1.5 1.0 – 45 – 42 43 10 0.8 3.6 to 4.2 4.2 NEZ4450-4D, 4DD 35.5 36.5 9.5 10.5 1.2 1.5 1.0 – 45 – 42 40 10 0.8 4.4 to 5.0 5.0 NEZ5964-4D, 4DD 35.5 36.5 9.0 10.0 1.2 1.5 1.0 – 45 – 42 37 10 0.8 5.9 to 6.45 6.45 NEZ6472-4D, 4DD 35.5 36.5 8.0 9.0 1.2 1.5 1.0 – 45 – 42 35 10 0.8 6.4 to 7.2 7.2 NEZ7177-4D, 4DD 35.5 36.5 7.5 8.5 1.2 1.5 1.0 – 45 – 42 33 10 0.8 7.1 to 7.7 7.7 NEZ7785-4D, 4DD 35.5 36.5 7.0 8.0 1.2 1.5 1.0 – 45 – 42 33 10 0.8 7.7 to 8.5 8.5 Notes *1 Output power at 1dB gain compression point *2 IDS values are specified at P1dB point. *3 Gain flatness *4 Applies to – 4DD option only *5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 26dBm (single carrier level) MAXIMUM OPERATING LIMITS Rg max. VDS max. ( Ω) (V) 200 10 Rg max is the maximum series resistance between the gate supply and the FET gate. |
同様の部品番号 - NEZ4450-4D |
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同様の説明 - NEZ4450-4D |
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