データシートサーチシステム |
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1N1187 データシート(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N1187 データシート(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 300 V IF = 35 A Features • High Surge Capability DO-5 Package • Types from 50 to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 1N1183 (R) 1N1184 (R) Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Silicon Standard Recovery Diode Conditions 300 210 300 200 1N1183 thru 1N1187R 1N1187 (R) 200 140 1N1186 (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified 2. Reverse polarity (R): Stud is anode. DC blocking voltage VDC 50 100 V Continuous forward current IF 35 35 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol 1N1183 (R) 1N1184 (R) Unit Diode forward voltage 1.2 1.2 10 10 μA 10 10 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.25 0.25 °C/W V Electrical characteristics, at Tj = 25 °C, unless otherwise specified -55 to 150 -55 to 150 TC = 25 °C, tp = 8.3 ms 300 200 Surge non-repetitive forward current, Half Sine Wave IF,SM 1N1186 (R) 0.25 VR = 50 V, Tj = 140 °C 0.25 1.2 1.2 10 VR = 50 V, Tj = 25 °C IF = 35 A, Tj = 25 °C TC ≤ 140 °C Conditions 595 595 -55 to 150 35 35 10 A 595 Reverse current IR VF 595 -55 to 150 1N1187 (R) 10 10 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
同様の部品番号 - 1N1187 |
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同様の説明 - 1N1187 |
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