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FDD26AN06_F085 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDD26AN06_F085 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2010 Fairchild Semiconductor Corporation FDD13AN06A0_F085 Rev. A FDD13AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 13.5m Ω Features •rDS(ON) = 11.5mΩ (Typ.), VGS = 10V, ID = 50A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82555 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current 50 A Continuous (TC < 80 oC, V GS = 10V) Continuous (TA = 25 oC, V GS = 10V, R θJA = 52 oC/W) 9.9 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy ( Note 1) 56 mJ PD Power dissipation 115 W Derate above 25 oC0.77 W/ o C TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252 1.3 oC/W RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 52 oC/W D G S TO-252AA FDD SERIES GATE SOURCE (FLANGE) DRAIN • RoHS Compliant September 2010 |
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