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FDD850N10LD データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 FDD850N10LD
部品情報  BoostPak (N-Channel PowerTrench짰 MOSFET Diode)
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD850N10LD データシート(HTML) 2 Page - Fairchild Semiconductor

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©2013 Fairchild Semiconductor Corporation
FDD850N10LD Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics of the MOSFET T
C = 25
oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDD850N10LD
850N10LD
TO-252 5L
Tape and Reel
13”
16 mm
2500 units
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
-
-
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25oC-
0.1
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
-
-
1
μA
VDS = 80 V, TC = 125oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20 V, VDS = 0 V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA1.0
-
2.5
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 12 A
-
61
75
m
Ω
VGS = 5 V, ID =12 A
-
64
96
gFS
Forward Transconductance
VDS = 10 V, ID = 15.3 A
-31
-
S
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
1100
1465
pF
Coss
Output Capacitance
-
80
105
pF
Crss
Reverse Transfer Capacitance
-
42
-
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 80 V, ID = 15.3 A
(Note 4)
-
22.2
28.9
nC
Qg(tot)
Total Gate Charge at 5V
-
12.3
16.0
nC
Qgs
Gate to Source Gate Charge
-
3.0
-
nC
Qgd
Gate to Drain “Miller” Charge
-
5.7
-
nC
ESR
Equivalent Series Resistance (G-S)
f = 1 MHz
-
1.75
-
Ω
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 15.3 A,
VGS = 5 V, RG = 4.7 Ω
(Note 4)
-17
44
ns
tr
Turn-On Rise Time
-
21
52
ns
td(off)
Turn-Off Delay Time
-
27
64
ns
tf
Turn-Off Fall Time
-
8
26
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
15.3
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12 A
-
-
1.3
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 15.3 A, VDS = 80 V,
dIF/dt = 100 A/μs
-38
-
ns
Qrr
Reverse Recovery Charge
-
50
-
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 15.3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.


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