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データシートサーチシステム |
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データシートサーチシステム |
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FDD1600N10ALZD データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDD1600N10ALZD データシート(HTML) 3 Page - Fairchild Semiconductor |
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3 / 12 page  ©2013 Fairchild Semiconductor Corporation FDD1600N10ALZD Rev. C2 www.fairchildsemi.com 3 Electrical Characteristics of the Diode T C = 25 oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VR DC Blocking Voltage IR = 1 mA 150 - - V VFM Maximum Instantaneous Forward Voltage IF = 4 A TC = 25oC- - 2.5 V TC = 125oC - 1.01 - IRM Maximum Instantaneous Reverse Current @ rated VR TC = 25oC- - 50 uA TC = 125oC - - 1000 trr Diode Reverse Recovery Time IF = 4 A, dI/dt = 200 A/ μs TC = 25oC - 12.7 26 ns TC = 125oC - 17.1 - Irr Diode Peak Reverse Recovery Current TC = 25oC- 2.6 6 A TC = 125oC- 3.8 - Qrr Diode Reverse Recovery Charge TC = 25oC - 18.3 - nC TC = 125oC - 35.7 - WAVL Avalanche Energy (L = 40 mH) 10 - - mJ |
同様の部品番号 - FDD1600N10ALZD |
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同様の説明 - FDD1600N10ALZD |
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