FDD8445_F085 datasheet(6/7 Pages) FAIRCHILD

部品番号	FDD8445_F085

部品情報	N-Channel PowerTrench MOSFET

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Typical Characteristics

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge vs Gate to Source

Voltage

-80

-40

0

40

80

120

160

200

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

V

GS=VDS

I

D =250μA

T

J, JUNCTION TEMPERATURE (

oC)

-80

-40

0

40

80

120

160

200

0.90

0.95

1.00

1.05

1.10

I

D =250μA

T

J, JUNCTION TEMPERATURE (

oC)

0.1

1

10

100

1000

10000

CRSS

COSS

CISS

f = 1MHz

V

GS = 0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

40

020

40

60

0

2

4

6

8

10

V

DD=25V

V

DD=15V

V

DD=20V

I

D=50A

Q

g , GATE CHARGE (nC)

FDD8445

_F085 Rev A (W)

同様の部品番号 - FDD8445_F085

メーカー	部品番号	データシート	部品情報
ON Semiconductor	FDD8445-F085	1Mb / 6P	N-Channel PowerTrench짰 MOSFET September-2017, Rev. 2

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