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FDG6301N_F085 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDG6301N_F085 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics . Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical Characteristics ( continued) 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 Q , GATE CHARGE (nC) g I = 0.22A D V = 5V DS 10V 0.4 0.8 2 5 10 25 40 0.01 0.03 0.1 0.3 1 V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT DC DS 10s 100ms 10ms V = 4.5V SINGLE PULSE R = 415 °C/W T = 25°C θJA GS A 1s 0.1 0.3 1 3 10 25 2 3 5 8 15 30 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss 0.0001 0.001 0.01 0.1 1 10 200 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) SINGLE PULSE R =415°C/W T = 25°C θJA A 0.0001 0.001 0.01 0.1 1 10 100 200 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 T - T = P * R (t) A J P(pk) t1 t 2 θJA R (t) = r(t) * R R =415 °C/W θJA θJA θJA Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermal response will change depending on the circuit board design. FDG6301N_F085 Rev. A www.fairchildsemi.com 4 |
同様の部品番号 - FDG6301N_F085 |
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