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FQD13N10 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FQD13N10 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 Thermal Characteristics FQD13N10 N-Channel QFET® MOSFET 100 V, 10 A, 180 mΩ Description ©2000 Fairchild Semiconductor Corporation FQD13N10 Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 10 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. D-PAK G S D G S D Symbol Parameter FQD13N10TM Unit RJC Thermal Resistance, Junction to Case, Max. 3.13 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 Symbol Parameter FQD13N10TM Unit VDSS Drain-Source Voltage 100 V ID Drain Current 10 A - Continuous (TC = 25°C) - Continuous (TC = 100°C) 6.3 A IDM Drain Current - Pulsed (Note 1) 40 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 95 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 40 W - Derate above 25°C 0.32 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, .1/8" from case for 5 seconds 300 °C |
同様の部品番号 - FQD13N10 |
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同様の説明 - FQD13N10 |
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