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HGTD1N120BNS データシート(PDF) 2 Page - Intersil Corporation

部品番号 HGTD1N120BNS
部品情報  5.3A, 1200V, NPT Series N-Channel IGBT
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メーカー  INTERSIL [Intersil Corporation]
ホームページ  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTD1N120BNS データシート(HTML) 2 Page - Intersil Corporation

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
1200
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
5.3
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
2.7
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
6A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
6A at 1200V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
W/oC
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
10
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
8
µs
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
13
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25
oC.
3. VCE(PK) = 840V, TJ = 125
oC, R
G = 82Ω.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
-
-
V
Collector to Emitter Leakage Current
ICES
VCE = BVCES
TC = 25
oC
-
-
250
µA
TC = 125
oC
-
20
-
µA
TC = 150
oC
-
-
1.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 1.0A
VGE = 15V
TC = 25
oC
-
2.5
2.9
V
TC = 150
oC
-
3.8
4.3
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 50µA, VCE = VGE
6.0
7.1
-
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 82Ω, VGE = 15V,
L = 2mH, VCE(PK) = 1200V
6-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 1.0A, VCE = 0.5 BVCES
-
9.2
-
V
On-State Gate Charge
QG(ON)
IC = 1.0A
VCE = 0.5 BVCES
VGE = 15V
-
14
20
nC
VGE = 20V
-
15
21
nC
HGTD1N120BNS, HGTP1N120BN


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