データシートサーチシステム |
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HGTD1N120BNS データシート(PDF) 2 Page - Intersil Corporation |
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HGTD1N120BNS データシート(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 5.3 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 2.7 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 6A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150 oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 60 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 10 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260 oC Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25 oC. 3. VCE(PK) = 840V, TJ = 125 oC, R G = 82Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25 oC - - 250 µA TC = 125 oC - 20 - µA TC = 150 oC - - 1.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 1.0A VGE = 15V TC = 25 oC - 2.5 2.9 V TC = 150 oC - 3.8 4.3 V Gate to Emitter Threshold Voltage VGE(TH) IC = 50µA, VCE = VGE 6.0 7.1 - V Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA Switching SOA SSOA TJ = 150 oC, R G = 82Ω, VGE = 15V, L = 2mH, VCE(PK) = 1200V 6- - A Gate to Emitter Plateau Voltage VGEP IC = 1.0A, VCE = 0.5 BVCES - 9.2 - V On-State Gate Charge QG(ON) IC = 1.0A VCE = 0.5 BVCES VGE = 15V - 14 20 nC VGE = 20V - 15 21 nC HGTD1N120BNS, HGTP1N120BN |
同様の部品番号 - HGTD1N120BNS |
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同様の説明 - HGTD1N120BNS |
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