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HGTG5N120CND データシート(PDF) 3 Page - Intersil Corporation

部品番号 HGTG5N120CND
部品情報  25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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メーカー  INTERSIL [Intersil Corporation]
ホームページ  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTG5N120CND データシート(HTML) 3 Page - Intersil Corporation

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3
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 150
oC
ICE = 5.5A
VCE = 0.8 BVCES
VGE = 15V
RG = 25Ω
L = 5mH
Test Circuit (Figure 20)
-20
25
ns
Current Rise Time
trI
-12
16
ns
Current Turn-Off Delay Time
td(OFF)I
-
225
300
ns
Current Fall Time
tfI
-
350
400
ns
Turn-On Energy
EON
-
1
1.2
mJ
Turn-Off Energy (Note 3)
EOFF
-
1
1.1
mJ
Diode Forward Voltage
VEC
IEC = 5.5A
-
2.4
3.3
V
Diode Reverse Recovery Time
trr
IEC = 5.5A, dIEC/dt = 200A/µs
-
48
60
ns
IEC = 1A, dIEC/dt = 200A/µs
-
30
40
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
-
0.75
oC/W
Diode
-
-
1.9
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (
oC)
50
5
0
20
10
15
VGE = 15V
25
75
100
125
150
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
15
0
5
10
600
800
400
200
1000
1200
0
20
25
TJ = 150
oC, R
G = 25Ω, VGE = 15V, L = 200µH
30
35
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS


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