MTB08N04J3-0-T3-G datasheet(2/9 Pages) CYSTEKEC

部品番号	MTB08N04J3-0-T3-G

部品情報	N -Channel Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

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CYStech Electronics Corp.

Spec. No. : C892J3

Issued Date : 2014.05.29

Revised Date :

Page No. : 2/9

MTB08N04J3

CYStek Product Specification

Absolute Maximum Ratings (TC=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

40

Gate-Source Voltage

VGS

±

20

V

Continuous Drain Current @ TC=25

°C

60

Continuous Drain Current @ TC=100

°C

38

Continuous Drain Current @ TA=25

°C

*2

13

Continuous Drain Current @ TA=100

°C

*2

8.2

Continuous Drain Current @ TA=25

°C

*3

11

Continuous Drain Current @ TA=100

°C

*3

ID

7.0

Pulsed Drain Current *1

IDM

140

Avalanche Current

IAS

18

A

Avalanche Energy @ L=1mH, ID=18A, RG=25Ω

EAS

162

mJ

Total Power Dissipation @TC=25℃

50

Total Power Dissipation @TC=100℃

20

Total Power Dissipation @TA=25℃

2.5

Total Power Dissipation @TA=100℃

1.0

Total Power Dissipation @TA=25℃

1.7

Total Power Dissipation @TA=100℃

PD

0.7

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

2.5

Thermal Resistance, Junction-to-ambient, max

*2

50

Thermal Resistance, Junction-to-ambient, max

*3

Rth,j-a

75

°C/W

Note : *1

. Pulse width limited by maximum junction temperature

*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.

*3. When the device is on the minimum pad size recommended.

Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

40

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

0.03

-

V/

°C

Reference to 25

°C, ID=250μA

VGS(th)

1.5

2.1

2.5

V

VDS =VGS, ID=250μA

GFS *1

-

20

-

S

VDS =5V, ID=10A

IGSS

-

±

100

nA

VGS=±20V, VDS=0V

-

1

VDS =32V, VGS =0V

IDSS

-

25

μA

VDS =32V, VGS =0, Tj=125

°C

-

5.4

8.5

VGS =10V, ID=15A

RDS(ON) *1

-

9.0

13.5

mΩ

VGS =5V, ID=10A

同様の部品番号 - MTB08N04J3-0-T3-G

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