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MTB060N06I3-0-UA-G データシート(PDF) 4 Page - Cystech Electonics Corp. |
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MTB060N06I3-0-UA-G データシート(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : Page No. : 4/8 MTB060N06I3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 30 02 46 8 10V, 9V, 8V, 7V,6V,5V VDS, Drain-Source Voltage(V) VGS=4V V =3V GS Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 10000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=3V VGS=2.5V VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 1 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 40 80 120 160 200 240 280 320 360 400 02 46 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=5V, ID=8A VGS=10V, ID=10A VGS, Gate-Source Voltage(V) ID=10A ID=8A |
同様の部品番号 - MTB060N06I3-0-UA-G |
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同様の説明 - MTB060N06I3-0-UA-G |
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