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IRF221 データシート(PDF) 2 Page - Intersil Corporation

部品番号 IRF221
部品情報  4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
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メーカー  INTERSIL [Intersil Corporation]
ホームページ  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF221 データシート(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF220
IRF221
IRF222
IRF223
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
200
150
200
150
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
200
150
200
150
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.0
3.0
5.0
3.0
4.0
2.5
4.0
2.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
20
20
16
16
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
40
40
40
40
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.32
0.32
0.32
0.32
W/oC
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS
85
85
85
85
mJ
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V, (Figure 10)
IRF220, IRF222
200
-
-
V
IRF221, IRF223
150
-
-
V
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF220, IRF221
5.0
-
-
A
IRF222, IRF223
4.0
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON) ID = 2.5A, VGS = 10V, (Figure 8)
IRF220, IRF221
-
0.5
0.8
IRF222, IRF223
-
0.8
1.2
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A
1.3
2.5
-
S
Turn-On Delay Time
td(ON)
VDD = 0.5 x Rated BVDSS, ID ≈ 2.5A, RG = 50Ω
For IRF220, 222 RL = 80Ω
For IRF221, 223 RL = 60Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-20
40
ns
Rise Time
tr
-30
60
ns
Turn-Off Delay Time
td(OFF)
-
50
100
ns
Fall Time
tf
-30
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT) VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
-11
15
nC
Gate to Source Charge
Qgs
-
5.0
-
nC
Gate to Drain “Miller” Charge
Qgd
-
6.0
-
nC
IRF220, IRF221, IRF222, IRF223


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