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IRF221 データシート(PDF) 2 Page - Intersil Corporation |
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IRF221 データシート(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified IRF220 IRF221 IRF222 IRF223 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS 200 150 200 150 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 200 150 200 150 V Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 5.0 3.0 5.0 3.0 4.0 2.5 4.0 2.5 A A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 20 20 16 16 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD 40 40 40 40 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 0.32 0.32 0.32 W/oC Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS 85 85 85 85 mJ Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) IRF220, IRF222 200 - - V IRF221, IRF223 150 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125 oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V IRF220, IRF221 5.0 - - A IRF222, IRF223 4.0 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 2.5A, VGS = 10V, (Figure 8) IRF220, IRF221 - 0.5 0.8 Ω IRF222, IRF223 - 0.8 1.2 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A 1.3 2.5 - S Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 2.5A, RG = 50Ω For IRF220, 222 RL = 80Ω For IRF221, 223 RL = 60Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature -20 40 ns Rise Time tr -30 60 ns Turn-Off Delay Time td(OFF) - 50 100 ns Fall Time tf -30 60 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature -11 15 nC Gate to Source Charge Qgs - 5.0 - nC Gate to Drain “Miller” Charge Qgd - 6.0 - nC IRF220, IRF221, IRF222, IRF223 |
同様の部品番号 - IRF221 |
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同様の説明 - IRF221 |
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