データシートサーチシステム |
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2SK1527-E1-E データシート(PDF) 3 Page - Renesas Technology Corp |
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2SK1527-E1-E データシート(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SK1527-E1-E Preliminary R07DS1196EJ0100 Rev.1.00 Page 3 of 6 Mar 26, 2014 Main Characteristics 1000 100 0.1 10 100 1000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 1 10 1 50 820 Drain to Source Voltage VDS (V) Typical Output Characteristics 40 10 0 412 16 0 20 30 4.5 V VGS = 4 V 10 V 6 V 5 V 50 4 10 Gate to Source Voltage VGS (V) Typical Transfer Characteristics 40 10 2 06 8 –25 °C 0 20 30 VDS = 10 V Pulse Test 25 °C Ta = 75 °C Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) Tc = 25 °C 1 shot 10 μs PW = 100 μs Operation in this area is limited by RDS(on) Ta = 25 °C, Pulse Test 1 0.1 0.01 10 100 1000 VGS = 10 V Ta = 25 °C Pulse Test Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) −25 0 50 25 75 100 125 150 VGS = 10 V Pulse Test 0.5 0.4 0.1 0 0.2 0.3 ID = 50 A 20 A 10 A 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di/dt = 100 A/ μs VGS = 0, Ta = 25°C |
同様の部品番号 - 2SK1527-E1-E_15 |
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同様の説明 - 2SK1527-E1-E_15 |
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