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PZT13003 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT13003 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente PZT13003 1.5A , 700V NPN Silicon Medium Power Transistor 19-Jan-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For AF driver and output stages Power switching applications CLASSIFICATION OF hFE Product-Rank PZT13003-A PZT13003-B PZT13003-C Range 8~20 15~30 25~40 PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current -Continuous IC 1.5 A Collector Power Dissipation PD 1.25 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 700 V IC=1mA , IE=0 Collector-emitter breakdown voltage V(BR)CEO 450 V IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 9 V IE=1mA, IC=0 Collector cut-off current ICBO 0.1 mA VCB=700V, IE=0 Emitter-Base Cutoff Current IEBO 0.05 mA VEB=9V, IC=0 DC current gain hFE 8 40 VCE=10V, IC=0.5A Collector-emitter saturation voltage 1 VCE(sat) 1 V IC=1A, IB=250mA Base-emitter voltage VBE(on) 1.2 V IC=1A, IB=250mA ON-Time T(on) 1 μS Storage time tS 4 μS Fall time tf 0.7 μS VCE=10V, IC=2A IB1=IB2=400mA Transition frequency fT 4 MHz VCE=10V, IC=500mA, f=1.0MHZ Top View 1 2 3 4 A M B D L K F G H J E C Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 SOT-223 |
同様の部品番号 - PZT13003_15 |
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同様の説明 - PZT13003_15 |
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