IRLU024N datasheet(7/10 Pages) KERSEMI

部品番号	IRLU024N

部品情報	Logic-Level Gate Drive

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メーカー	KERSEMI [Kersemi Electronic Co., Ltd.]

ホームページ	http://www.kersemi.com

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P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

Fig 14. For N-Channel HEXFET® MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*

IRLR/U024N

www.kersemi.com

2014-8-24

7

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