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2SJ687 データシート(PDF) 9 Page - Renesas Technology Corp |
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2SJ687 データシート(HTML) 9 Page - Renesas Technology Corp |
9 / 10 page Data Sheet D18719EJ2V0DS 7 2SJ687 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 6.5 ±0.2 2.3 ±0.1 0.5 ±0.1 0.76 ±0.12 0 to 0.25 0.5 ±0.1 1.0 No Plating No Plating 5.1 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
同様の部品番号 - 2SJ687_15 |
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同様の説明 - 2SJ687_15 |
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