2SJ690_15 datasheet(3/8 Pages) RENESAS

部品番号	2SJ690

部品情報	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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MOS FIELD EFFECT TRANSISTOR

2SJ690

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No. D19954EJ1V0DS00 (1st edition)

Date Published September 2009 NS

Printed in Japan

2009

DESCRIPTION

The 2SJ690 is a P-channel MOSFET designed for power switch

of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 119 m

Ω MAX. (VGS = −4.5 V, ID = −1.0 A)

RDS(on)2 = 217 m

Ω MAX. (VGS = −2.5 V, ID = −1.0 A)

• Built-in gate protection diode

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ690-T1B-AT

SC-96 (Mini Mold Thin Type)

Remark “-AT” indicates Pb-free (This product does not contain Pb

in external electrode and other parts.).

“-T1B” indicates the unit orientation.

(8 mm embossed carrier tape, 3000 pcs/reel)

Marking: XT

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m12

V

Drain Current (DC)

ID(DC)

m2.5

A

Drain Current (pulse)

Note1

ID(pulse)

m10

A

Total Power Dissipation

PT1

0.2

W

Total Power Dissipation

Note2

PT2

1.25

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 board, t

≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

PACKAGE DRAWING (Unit : mm)

0.65

0.9 to 1.1

0 to 0.1

0.16

+0.1

–0.06

0.4

+0.1

–0.05

0.95

1

2

3

1.9

2.9

±0.2

0.95

1: Gate

2: Source

3: Drain

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

同様の部品番号 - 2SJ690_15

メーカー	部品番号	データシート	部品情報
Renesas Technology Corp	2SJ690-T1B-AT	267Kb / 8P	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING September 2009 NS

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