IRF7811W

4

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Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

0.00001

0.0001

0.001

0.01

0.1

1

10

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 6. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

0.4

0.6

0.8

1.0

1.2

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

Fig 5. Typical Transfer Characteristics

0.1

1

10

100

2.5

3.0

3.5

4.0

4.5

5.0

V

= 15V

20µs PULSE WIDTH

DS

V

, Gate-to-Source Voltage (V)

GS

T = 25 C

J

°

T = 150 C

J

°