NE3510M04-T2 datasheet(5/12 Pages) RENESAS

部品番号	NE3510M04-T2

部品情報	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Data Sheet PG10676EJ02V0DS

3

NE3510M04

TYPICAL CHARACTERISTICS (TA = +25

°C, unless otherwise specified)

250

200

150

100

50

0

50

100

150

200

250

VDS = 2 V

100

90

80

70

60

50

40

30

20

10

0

–1.0

–0.8

–0.6

–0.4

–0.2

0

1.2

0.8

0.9

1.0

1.1

0.3

0.6

0.7

0.1

0.2

0.0

24

22

20

18

16

14

12

10

8

6

4

2

0

5

10

15

NFmin

Ga

VDS = 2 V

ID = 15 mA

0.5

0.4

1.2

0.8

0.9

1.0

1.1

0.3

0.6

0.7

0.1

0.2

0.0

24

22

20

18

16

14

12

10

8

6

4

2

0

5

10

15

20

25

30

35

NFmin

Ga

f = 2.0 GHz

VDS = 2 V

0.5

0.4

1.2

0.8

0.9

1.0

1.1

0.3

0.6

0.7

0.1

0.2

0.0

24

22

20

18

16

14

12

10

8

6

4

2

0

NFmin

Ga

f = 4.0 GHz

VDS = 2 V

0.5

0.4

0

5

10

15

20

25

30

35

Ambient Temperature TA (

°C)

vs. AMBIENT TEMPERATURE

TOTAL POWER DISSIPATION

Mounted on Glass Epoxy PCB

(1.08 cm

2

× 1.0 mm (t) )

Gate to Source Voltage VGS (V)

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

Frequency f (GHz)

ASSOCIATED GAIN vs. FREQUENCY

MINIMUM NOISE FIGURE,

Drain to Source Voltage VDS (V)

DRAIN TO SOURCE VOLTAGE

DRAIN CURRENT vs.

Drain Current ID (mA)

ASSOCIATED GAIN vs. DRAIN CURRENT

MINIMUM NOISE FIGURE,

Drain Current ID (mA)

ASSOCIATED GAIN vs. DRAIN CURRENT

MINIMUM NOISE FIGURE,

100

90

80

70

60

50

40

30

20

10

0

12345

VGS = 0 V

–0.2 V

–0.3 V

–0.1 V

–0.4 V

–0.5 V

–0.6 V

–0.7 V

Remark The graphs indicate nominal characteristics.

同様の部品番号 - NE3510M04-T2

メーカー	部品番号	データシート	部品情報
California Eastern Labs	NE3510M04-T2	180Kb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Labs	NE3510M04-T2-A	180Kb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISTOR

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同様の説明 - NE3510M04-T2

メーカー	部品番号	データシート	部品情報
California Eastern Labs	NE3509M04	284Kb / 9P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE34018	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3508M04	213Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE3509M04	1Mb / 11P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE38018	94Kb / 16P	L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M14	219Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
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NEC	NE33284A	62Kb / 10P	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET