データシートサーチシステム |
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2SK975 データシート(PDF) 4 Page - Renesas Technology Corp |
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2SK975 データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK975 Preliminary R07DS0434EJ0300 Rev.3.00 Page 4 of 6 Jun 07, 2011 80 Case Temperature TC (°C) 120 40 0 0.2 0.4 0.6 0.8 1.0 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 2 A Pulse Test VGS = 4 V VGS = 10 V 0.5 A 1 A 1 A 0.5 A 2 A Forward Transfer Admittance vs. Drain Current 5 2 1.0 0.5 0.2 0.1 0.05 0.05 0.1 0.2 0.5 1.0 5 Drain Current ID (A) 2 TC = 25°C VDS = 10 V Pulse Test –25 °C 75 °C 1000 500 200 100 50 20 10 0.05 0.1 0.5 5 Reverse Drain Current IDR (A) 1.0 0.2 2 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ μs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 1000 300 100 30 3 1 010 20 50 Drain to Source Voltage VDS (V) 30 10 40 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 02 6 8 Gate Charge Qg (nc) 4 20 16 12 8 4 Dynamic Input Characteristics 10 0 VDS VGS VDD = 50 V 10 V 25 V VDD = 50 V 25 V 10 V ID = 1.5 A Switching Characteristics 100 50 20 10 2 1 0.05 0.1 0.5 5 Drain Current ID (A) 1.0 0.2 2 5 td (off) tf VGS = 10 V VDD = 30 V PW = 2 μs, duty < 1 % td (on) tr • • |
同様の部品番号 - 2SK975_15 |
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同様の説明 - 2SK975_15 |
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