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ST110S16P1 データシート(PDF) 3 Page - International Rectifier

部品番号 ST110S16P1
部品情報  PHASE CONTROL THYRISTORS Stud Version
Download  9 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

ST110S16P1 データシート(HTML) 3 Page - International Rectifier

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ST110S Series
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/µs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST110S
Units Conditions
20
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
15.5
Non lubricated threads
(137)
14
Lubricated threads
(120)
wt
Approximate weight
130
g
Parameter
ST110S
Units
Conditions
0.195
DC operation
0.08
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
P
GM
Maximum peak gate power
5
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
1
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
2.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
to trigger
mA
T
J
= 25°C
T
J
= 125°C
V
GT
DC gate voltage required
T
J
= - 40°C
to trigger
V
T
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST110S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
°C
K/W
Nm
(lbf-in)
Case style
TO - 209AC (TO-94)
See Outline Table
VT
J
= T
J
max, t
p
5ms
To Order
Next Data Sheet
Index
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