KDV214 datasheet(1/2 Pages) KEC

部品番号	KDV214

部品情報	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)

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メーカー	KEC [KEC(Korea Electronics)]

ホームページ	http://www.keccorp.com

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2002. 6. 14

1/2

SEMICONDUCTOR

TECHNICAL DATA

KDV214

Revision No : 2

TV TUNING.

FEATURES

・High Capacitance Ratio : C2V/C25V=6.5(Typ.)

・Low Series Resistance : rS=0.4Ω(Typ.)

・Excellent C-V Characteristics, and Small Tracking Error.

・Useful for Small Size Tuner.

MAXIMUM RATING (Ta=25℃)

USC

DIM

MILLIMETERS

A

B

C

D

E

F

G

H

J

K

2.50 0.1

1.25 0.05

0.90 0.05

0.30+0.06/-0.04

1.70 0.05

MIN 0.17

0.126 0.03

0~0.1

0.15 0.05

0.4 0.05

2 +4/-2

L

M

4~6

I

1.0 MAX

M

I

C

J

G

D

2

1

B

1. ANODE

2. CATHODE

H

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

CHARACTERISTIC

SYMBOL

RATING

UNIT

Reverse Voltage

VR

30

V

Peak Reverse Voltage

VRM

35 (RL=10kΩ)

V

Junction Temperature

Tj

125

℃

Storage Temperature Range

Tstg

-55～125

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Voltage

VR

IR=1μA

30

-

V

Reverse Current

IR

VR=28V

-

10

nA

Capacitance

C2V

VR=2V, f=1MHz

14.16

-

16.25

pF

Capacitance

C25V

VR=25V, f=1MHz

2.11

-

2.43

pF

Capacitance Ratio

C2V/C25V

5.90

6.50

7.15

-

Series Resistance

rS

VR=5V, f=470MHz

-

0.4

0.55

Ω

Type Name

Marking

O

U

Note : Available in matched group for capacitance to 2.5%.

C(Max.)-C(Min.)

≦0.025

C(Min.)

(VR=2~25V)

同様の部品番号 - KDV214

メーカー	部品番号	データシート	部品情報
Guangdong Kexin Industr...	KDV214	34Kb / 1P	Silicon Epitaxial Planar Diode
KEC(Korea Electronics)	KDV214	349Kb / 1P	USC PACKAGE
	KDV214A	349Kb / 1P	USC PACKAGE
	KDV214A	368Kb / 2P	SILICON EPITAXIAL PLANAR DIODE
	KDV214E	355Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)

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同様の説明 - KDV214

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