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2SC4815 データシート(PDF) 3 Page - Renesas Technology Corp

部品番号 2SC4815
部品情報  SILICON POWER TRANSISTOR
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4815 データシート(HTML) 3 Page - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
©
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON
EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High hFE and low VCE(sat):
VCE(sat)
≤ 0.3 V @IC = 3.0 A, IB = 0.15 A
hFE
≥ 100
@VCE = 2.0 V, IC = 1.0 A
• Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation
PT
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*PW
≤ 300
µs, duty cycle ≤ 10%


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