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2SC4815 データシート(PDF) 3 Page - Renesas Technology Corp |
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2SC4815 データシート(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1998 © Document No. D15605EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DATA SHEET 2002 The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost reduction. FEATURES • High hFE and low VCE(sat): VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 0.15 A hFE ≥ 100 @VCE = 2.0 V, IC = 1.0 A • Available for auto mount in radial taping specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 5.0 A Collector current (pulse) IC(pulse)*10 A Base current (DC) IB(DC) 2.5 A Total power dissipation PT 1.8 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C *PW ≤ 300 µs, duty cycle ≤ 10% |
同様の部品番号 - 2SC4815_15 |
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同様の説明 - 2SC4815_15 |
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