BCW68G_15 datasheet(1/1 Pages) WINNERJOIN

部品番号	BCW68G

部品情報	PNP EPITAXIAL SILICON TRANSISTOR

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WEJ

ELECTRONIC

CO.,LTD

BCW68G

PNP EPITAXIAL SILICON TRANSISTOR

SURFACE MOUNT SMALL

SIGNAL TRANSISTORS

ABSOLUTE MAXIMUM RATINGS at Ta=25

Characteristic

Symbol

Rating

Unit

Collector-Emitter Voltage

Vceo

-45

V

Collector-Base Voltage

Vcbo

-60

V

Collector Current

Ic

-800

mA

Collector Dissipation Ta=25

*

PD

225

mW

Junction Temperature

Tj

150

Storage Temperature

Tstg

-65-150

1.BASE

2.EMITTER

3.COLLECTOR

1.

1.3

2.4

U nit:m m

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol

Min

Max

Unit

Test Conditions

DC Current Gain

Hfe

120

400

Vce= -1.0V Ic= -10mA

Collector-Emitter Saturation Voltage

Vce(sat)

-1.5

V

Ic= -300mA Ib= -30mA

Gain Bandwidth Product

fT

100

MHz

Vce= -5V

Ic=-10mA

f=50MHz

*

Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25

.

#

Pulse Test: Pulse Width

300uS,Duty cycle

2%

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