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F00311 データシート(PDF) 2 Page - Solid States Devices, Inc |
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F00311 データシート(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS @ TJ =25 oC (Unless Otherwise Specified) V Drain to Source Breakdown Voltage (VGS =0 V, ID = 250 µA) - BVDSS - RATING SYMBOL MIN TYP MAX UNIT 60 m Ω Ω Ω Ω Ω Drain to Source on State Resistance (VGS = 10 V,Tc = 150oC) RDS(on) - - - V Gate Threshold Voltage (VDS = VGS, ID = 250 µA) - VGS(th) 4.0 2 Smho Forward Transconductance (VDS > ID(on) X RDS (on) Max, IDS=60% rated ID) 35 gfs - 15 µµµµµA Zero Gate Voltage Drain Current (VDS = 80% rated voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA = 125 oC) - - IDSS - - Gate to Source Leakage Forward Gate to Source Leakage Reverse - - IGSS +100 -100 - - At rated VGS Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10 V 50% rated VDS Rated ID Qg Qgs Qgd - - - 80 13 40 120 17 64 nsec Turn on Delay Time Rise Time Turn off DelayTime Fall Time VDD =50% rated VDS 50% rated ID RG=6.2 Ω td (on) tr td (off) tf - - - - 20 35 65 40 27 66 100 60 V 1.47 VSD 1.4 - Diode Reverse Recovery Time Reverse Recovery Charge 70 trr QRR 150 - TJ =25oC IF = 10 di/dt = 100A/ µsec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 Volts VDS =25 Volts f =1 MHz Ciss Coss Crss - - - 2600 700 260 2900 1100 275 pF nsec For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. A On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) - ID(on) - 75 Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25 oC) nC nA 250 1000 SFF75N06M SFF75N06Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 NOTES: 1/ Maximum current limited by package, die rated at 75A. ID=37.5A ID=75A ID=37.5A 13 15 19 - - - |
同様の部品番号 - F00311_15 |
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同様の説明 - F00311_15 |
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