CZT31C NPN

CZT32C PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT31C and

CZT32C types are surface mount epoxy molded

complementary silicon transistors manufactured by the

epitaxial base process, designed for surface mounted

power amplifier applications up to 3.0 amps.

MARKING: FULL PART NUMBER

SOT-223 CASE

SOT-223 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

3.0

A

Peak Collector Current

ICM

6.0

A

Continuous Base Current

IB

1.0

A

Power Dissipation

PD

2.0

W

Power Dissipation (TC=25°C)

PD

10

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

Thermal Resistance

ΘJC

12.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=100V

200

µA

ICEO

VCE=60V

300

µA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA

100

V

VCE(SAT)

IC=3.0A, IB=375mA

1.2

V

VBE(ON)

VCE=4.0V, IC=3.0A

1.8

V

hFE

VCE=4.0V, IC=1.0A

25

hFE

VCE=4.0V, IC=3.0A

10

100

fT

VCE=10V, IC=500mA, f=1.0MHz

3.0

MHz

R4 (1-March 2010)

www.centra lsemi.com