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IRF1405SPBF データシート(PDF) 1 Page - International Rectifier

部品番号 IRF1405SPBF
部品情報  Advanced Process Technology
Download  11 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF1405SPBF データシート(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
131
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
93
†
A
IDM
Pulsed Drain Current

680
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
590
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
‡
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety
of applications.
S
D
G
Absolute Maximum Ratings
VDSS = 55V
RDS(on) = 5.3mΩ
ID = 131A
†
Description
07/14/10
www.irf.com
1
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB mount)
ˆ
–––
40
D2Pak
IRF1405SPbF
TO-262
IRF1405LPbF
IRF1405SPbF
IRF1405LPbF
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Benefits
PD-95331A
Typical Applications
l
Industrial Motor Drive


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