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IRF2204SPBF データシート(PDF) 1 Page - International Rectifier |
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IRF2204SPBF データシート(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 170 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A IDM Pulsed Drain Current 850 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 460 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) HEXFET® Power MOSFET S D G Absolute Maximum Ratings VDSS = 40V RDS(on) = 3.6mΩ ID = 170A 07/22/10 www.irf.com 1 Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθJA Junction-to-Ambient ––– 40 IRF2204SPbF IRF2204LPbF D2Pak IRF2204SPbF TO-262 IRF2204LPbF °C/W Typical Applications l Industrial Motor Drive This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Description l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features PD - 95491A |
同様の部品番号 - IRF2204SPBF |
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同様の説明 - IRF2204SPBF |
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