IRF3305PBF datasheet(1/9 Pages) IRF

部品番号	IRF3305PBF

部品情報	FULLY AVALANCHE RATED

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07/23/10

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1

HEXFET® Power MOSFET

VDSS = 55V

RDS(on) = 8.0mΩ

ID = 75A

S

D

G

Description

l

Designed to support Linear Gate Drive

Applications

l

175°C Operating Temperature

l

Low Thermal Resistance Junction - Case

l

Rugged Process Technology and Design

l

Fully Avalanche Rated

l

Lead-Free

Features

TO-220AB

IRF3305PbF

Absolute Maximum Ratings

Parameter

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

Pulsed Drain Current

PD @TC = 25°C Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

EAS (Thermally limited) Single Pulse Avalanche Energyd

mJ

EAS (Tested )

Single Pulse Avalanche Energy Tested Value

h

IAR

Avalanche Current

Ã

A

EAR

Repetitive Avalanche Energy

g

mJ

TJ

Operating Junction and

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

i

–––

0.45

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

i

–––

62

-55 to + 175

300 (1.6mm from case )

10 lbf

yin (1.1Nym)

330

2.2

± 20

Max.

140

99

560

75

860

470

See Fig.12a, 12b, 15, 16

This HEXFET Power MOSFET utilizes a rugged

planar process technology and device design,

which greatly improves the Safe Operating Area

(SOA) of the device. These features, coupled

with 175°C junction operating temperature and

"low thermal resistance of 0.45C/W"

PD - 95758A

同様の部品番号 - IRF3305PBF

メーカー	部品番号	データシート	部品情報
International Rectifier	IRF3305PBF	186Kb / 10P	HEXFET짰 Power MOSFET

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