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FM200HB1D5B データシート(PDF) 2 Page - KEC(Korea Electronics) |
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FM200HB1D5B データシート(HTML) 2 Page - KEC(Korea Electronics) |
2 / 2 page 2013. 7. 24 2/2 FM200HB1D5B Revision No : 0 ELECTRICAL CHARACTERISTICS (@Tc=25 ℃ Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 150 - - V Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 3.0 - 5.0 V Drain to Source Leakage Current IDSS VDS=150V, VGS=0V - - 40 μA Gate to Source Leakage Current IGSS VGS=20V - - 200 nA VGS=-20V - -200 nA Drain to Source ON Resistance RDS(ON) VGS=10V, ID=200A - 3.3 4.0 m Ω Dynamic Total Gate Charge Qg ID=200A, VDS=75V, VGS=10V - 300 - nC Gate to Source Charge Qgs - 100 - Gate to Source Charge Qgd - 110 - Turn On Delay Time td(on) VDS=75V, ID=200A, RG=3.3Ω - TBD - ns Rise Time tr - TBD - Turn Off Delay Tine td(off) - TBD - Fall Time tf - TBD - Input Capacitance Ciss VDS=50V, VGS=0V, f=1㎒ - 20 - nF Output Capacitance Coss - 2 - Reverse Transfer Capacitance Crss - 0.4 - Source-Drain Diode Ratings Continuous Source Current IS - - 340 A Pulsed Source Current ISP - - 1300 Diode Forward Voltage VSD ID=200A, VGS=0V - 1.0 1.3 V Reverse Recovery Time trr VR=75V, ID=200A, di/dt=-100A/us - TBD - ns Reverse Recovery Charge Qrr - TBD - nC |
同様の部品番号 - FM200HB1D5B |
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同様の説明 - FM200HB1D5B |
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