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BAT854W データシート(PDF) 3 Page - NXP Semiconductors

部品番号 BAT854W
部品情報  Schottky barrier (double) diodes
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAT854W データシート(HTML) 3 Page - NXP Semiconductors

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2001 Feb 27
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
Note
1.
Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
40
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
1
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 0.1 mA
200
mV
IF = 1 mA
260
mV
IF = 10 mA
340
mV
IF = 30 mA
420
mV
IF = 100 mA
550
mV
IR
continuous reverse current
VR = 25 V; note 1; see Fig.7
0.5
μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.8
20
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
625
K/W


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