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BAT720 データシート(PDF) 3 Page - NXP Semiconductors |
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BAT720 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 10 page BAT720 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 — 14 November 2012 3 of 10 NXP Semiconductors BAT720 Schottky barrier diode 7. Characteristics [1] Pulse test: tp 300 s; 0.02. Table 7. Characteristics Tj =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF =500 mA [1] - - 550 mV IR reverse current VR =35V [1] - - 100 A VR =35V; Tj =100 C [1] --10 mA Cd diode capacitance f = 1 MHz; VR = 0 V 60 - 90 pF (1) Tamb = 125 C (2) Tamb =85 C (3) Tamb =25 C (1) Tamb = 125 C (2) Tamb =85 C (3) Tamb =25 C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values mbk578 VF (mV) IF (mA) 150 250 350 450 550 103 102 10 10−1 1 (1) (2) (3) 006aac893 10-2 10-1 1 10 IR (mA) 10-3 VR (V) 040 30 10 20 (1) (2) (3) |
同様の部品番号 - BAT720_15 |
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同様の説明 - BAT720_15 |
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