MTB11N03BQ8 datasheet(5/9 Pages) CYSTEKEC

部品番号	MTB11N03BQ8

部品情報	N-Channel Logic Level Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : CA00Q8

Issued Date : 2015.05.01

Revised Date :

Page No. : 5/9

MTB11N03BQ8

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

f=1MHz

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1.0

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250μA

ID=1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

ID, Drain Current(A)

VDS=5V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

02

46

8

10

12

14

16

Qg, Total Gate Charge(nC)

ID=11A

VDS=6V

VDS=12V

VDS=24V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01

0.1

1

10

100

VDS, Drain-Source Voltage(V)

DC

100ms

1s

10ms

100μs

1ms

RDS(ON)

Limit

TA=25°C, Tj=150°C

VGS=10V,RθJA=40°C/W

Single Pulse

Maximum Drain Current vs Junction Temperature

0

2

4

6

8

10

12

14

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C,RθJA=40°C/W,VGS=10V

同様の部品番号 - MTB11N03BQ8

メーカー	部品番号	データシート	部品情報
SHENZHEN DOINGTER SEMIC...	MTB11N03BQ8	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

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