データシートサーチシステム |
|
MTB11N03BQ8 データシート(PDF) 5 Page - Cystech Electonics Corp. |
|
MTB11N03BQ8 データシート(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : CA00Q8 Issued Date : 2015.05.01 Revised Date : Page No. : 5/9 MTB11N03BQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 02 46 8 10 12 14 16 Qg, Total Gate Charge(nC) ID=11A VDS=6V VDS=12V VDS=24V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) DC 100ms 1s 10ms 100μs 1ms RDS(ON) Limit TA=25°C, Tj=150°C VGS=10V,RθJA=40°C/W Single Pulse Maximum Drain Current vs Junction Temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C,RθJA=40°C/W,VGS=10V |
同様の部品番号 - MTB11N03BQ8 |
|
同様の説明 - MTB11N03BQ8 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |