MTB010N06I3 datasheet(6/8 Pages) CYSTEKEC

部品番号	MTB010N06I3

部品情報	N-Channel Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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6 / 8 page

CYStech Electronics Corp.

Spec. No. : C137I3

Issued Date : 2015.05.05

Revised Date :

Page No. : 6/ 8

MTB010N06I3

CYStek Product Specification

Typical Characteristics(Cont.)

Typical Transfer Characteristics

0

20

40

60

80

100

120

140

160

180

02

46

8

10

VGS, Gate-Source Voltage(V)

VDS=10V

Single Pulse Power Rating, Junction to Case

0

300

600

900

1200

1500

1800

2100

2400

2700

3000

0.001

0.01

0.1

1

10

100

Pulse Width(s)

TJ(MAX)=175°C

TC=25°C

θJC=2.5°C/W

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t1, Square Wave Pulse Duration(s)

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJC(t)=r(t)*RθJC

2.Duty Factor, D=t1/t2

3.TJM-TC=PDM*RθJC(t)

4.RθJC=2.5°C/W

同様の部品番号 - MTB010N06I3

メーカー	部品番号	データシート	部品情報
Cystech Electonics Corp...	MTB010N06RI3	605Kb / 8P	N-Channel Enhancement Mode Power MOSFET
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	MTB010N06RJ3-0-T3-G	431Kb / 9P	N-Channel Enhancement Mode Power MOSFET
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同様の説明 - MTB010N06I3

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