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IRLS3034-7PPBF データシート(PDF) 1 Page - International Rectifier

部品番号 IRLS3034-7PPBF
部品情報  Uninterruptible Power Supply
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRLS3034-7PPBF データシート(HTML) 1 Page - International Rectifier

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1/12/09
www.irf.com
1
HEXFET® Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
PD - 97362
IRLS3034-7PPbF
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
D2Pak 7 Pin
G
S
S
D
S
S
S
VDSS
40V
RDS(on) typ.
1.0mΩ
max.
1.4mΩ
ID (Silicon Limited)
380Ac
ID (Package Limited)
240A
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
kl
–––
0.40
°C/W
RθJA
Junction-to-Ambient
j
–––
40
Max.
380
c
270
c
1540
240
A
°C
300
-55 to + 175
± 20
2.5
250
See Fig. 14, 15, 22a, 22b
380
1.3


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