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BF1100 データシート(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1100 データシート(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 14 page 1995 Apr 25 8 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R Fig.15 Gate 1 current as a function of gate 2 voltage; typical values. VDS =9V. RG1 = 180 kΩ (connected to VGG). Tj =25 °C. handbook, halfpage 02 46 50 40 30 10 0 20 MLD167 I G1 ( µA) V (V) G2 S 8 V 7 V 6 V 5 V 4 V V = 9 V GG Fig.16 Gate 1 current as a function of gate 2 voltage; typical values. VDS =12V. RG1 = 250 kΩ (connected to VGG). Tj =25 °C. handbook, halfpage 02 46 50 40 30 10 0 20 MLD168 I G1 ( µA) V (V) G2 S 11 V 10 V 9 V 8 V 7 V V = 12 V GG Fig.17 Drain current as a function of the gate 2 voltage; typical values; see Fig.27. VDS =9V. RG1 = 180 kΩ (connected to VGG). Tj =25 °C. handbook, halfpage 024 6 0 16 MLD169 12 8 4 I D (mA) 8 V 7 V 6 V 5 V 4 V V = 9 V GG V (V) G2 S VDS =12V. RG1 = 250 kΩ (connected to VGG). Tj =25 °C. Fig.18 Drain current as a function of the gate 2 voltage; typical values; see Fig.27. handbook, halfpage 024 6 0 16 MLD170 12 8 4 I D (mA) 11 V 10 V 9 V 8 V 7 V V = 12 V GG V (V) G2 S |
同様の部品番号 - BF1100_15 |
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同様の説明 - BF1100_15 |
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