データシートサーチシステム |
|
BF1100 データシート(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
|
BF1100 データシート(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 14 page 1995 Apr 25 5 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S = 4 V; ID = 10 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; Tj =25 °C VDS = 9 V 24 28 33 mS VDS = 12 V 24 28 33 mS Cig1-s input capacitance at gate 1 f = 1 MHz VDS =9V − 2.2 2.6 pF VDS =12V − 2.2 2.6 pF Cig2-s input capacitance at gate 2 f = 1 MHz VDS =9V − 1.6 − pF VDS =12V − 1.4 − pF Cos drain-source capacitance f = 1 MHz VDS =9V − 1.4 1.8 pF VDS =12V − 1.1 1.5 pF Crs reverse transfer capacitance f = 1 MHz VDS =9V − 25 35 fF VDS =12V − 25 35 fF F noise figure f = 800 MHz; GS =GSopt; BS =BSopt VDS =9V − 2 2.8 dB VDS =12V − 2 2.8 dB Fig.5 Gain reduction as a function of the AGC voltage; typical values. f = 50 MHz. Tj =25 °C. handbook, halfpage 0 10 20 30 40 50 01234 V (V) AGC gain reduction (dB) MLD157 (1) RG = 250 kΩ to VGG =12V (2) RG = 180 kΩ to VGG =9V fw = 50 MHz; funw = 60 MHz; Tamb =25 °C. Fig.6 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.27. handbook, halfpage 80 90 100 110 120 0 (1) (2) 10 20 30 40 50 Vunw (dB µV) gain reduction (dB) MLD158 |
同様の部品番号 - BF1100_15 |
|
同様の説明 - BF1100_15 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |