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BCP68G-XX-AA3-R データシート(PDF) 2 Page - Unisonic Technologies |
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BCP68G-XX-AA3-R データシート(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BCP68 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R207-008.F ABSOLUTE MAXIMUM RATINGS (TA=25C , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (Open Emitter) VCBO 32 V Collector-Emitter Voltage (Open Base) VCEO 20 V Emitter-Base Voltage (Open Collector) VEBO 5 V Collector Current DC IC 1 A Peak ICM 2 A Peak Base Current IBM 200 mA Total Power Dissipation (TA ≤ 25℃) PD 1.35 W Junction Temperature TJ 150 ℃ Operating Temperature TOPR -45 ~ +150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction To Ambient θJA 91 ℃ /W ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Saturation Voltage VCE(SAT) IC = 1A, IB =100mA 500 mV Base-Emitter Voltage VBE IC = 5mA, VCE = 10V 620 mV IC = 1A, VCE = 1V 1 V Collector Cut-off Current ICBO IE = 0, VCB = 25V 100 nA IE = 0, VCB = 25V, TJ = 150℃ 10 µA Emitter Cut-off Current IEBO IC = 0, VEB = 5V 100 nA DC Current Gain hFE IC = 5mA, VCE = 10V 50 IC = 500mA, VCE = 1V 85 375 IC = 1A, VCE = 1V 60 Collector Capacitance CC IE = ie = 0, VCB = 5V, f = 1MHz 48 pF Transition Frequency fT IC = -10mA, VCE = -5V, f = 100MHz 40 MHz DC Current Gain Ratio of the Complementary Pairs hFE1 hFE2 |IC| = 0.5A, |VCE| = 1V 1.6 CLASSIFICATION OF hFE RANK 16 25 RANGE 100~250 160~375 |
同様の部品番号 - BCP68G-XX-AA3-R |
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同様の説明 - BCP68G-XX-AA3-R |
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